Title :
High-power X-band GaN switched-filter phase shifter
Author :
Ross, Tyler N. ; Cormier, Gabriel ; Hettak, Khelifa ; Wight, Jim S.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, ON, Canada
Abstract :
This paper presents a high-power switched-filter GaN phase shifter, designed for X-band and offering good performance from 8-16 GHz. The manufactured 0°/22.5° switched-filter phase shifter has much wider bandwidth than is typically found with this configuration, while maintaining low insertion loss (<; 2 dB), good return loss (> 11.15 dB) and an amplitude imbalance of less than 1.03 dB across X-band. The 1 dB compression point was higher than laboratory equipment was able to measure (> 38 dBm) and the phase shifter MMIC exhibited an IIP3 higher than 46 dBm. The proposed high-power phase shifter has been fabricated in a 0.5 μm GaN HEMT process and was designed using an accurate, customized switch FET model.
Keywords :
III-V semiconductors; MMIC phase shifters; gallium compounds; microwave filters; switched filters; wide band gap semiconductors; GaN; HEMT process; accurate customized switch FET model; compression point; frequency 8 GHz to 16 GHz; high-power X-band switched-filter phase shifter; laboratory equipment; phase shifter MMIC; size 0.5 mum; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Phase measurement; Reliability; Switches; GaN; high linearity; high power; phase shifter; switch modeling;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848556
