Local digital etching and infiltration for tuning of a H1-cavity in deeply etched InP/InGaAsP/InP photonic crystals

Author

Kicken, H.H.J.E. ; Alkemade, P.F.A. ; van der Heijden, R.W. ; Karouta, F. ; Nötzel, R. ; van der Drift, E.W.J.M. ; Salemink, H.W.M.

Author_Institution

COBRA Res. Inst. & Center for Nanomater., Eindhoven Univ. of Technol., Eindhoven

fYear

2009

Firstpage

31

Lastpage

34

Abstract

Local post-production processing of single holes in a planar photonic crystal is demonstrated by selectively opening a masking layer by focused ion beam milling. Local tuning was optically demonstrated by both blue-shifting and subsequent red-shifting the resonance frequency of a point defect cavity. Since only a few holes of the PC are affected by the post-processing, the Q-factor is not significantly changed. This method can be applied to precisely control the resonant frequency, and can also be used for mode selective tuning.

Keywords

III-V semiconductors; etching; focused ion beam technology; gallium arsenide; indium compounds; milling; photonic crystals; point defects; red shift; InP-InGaAsP-InP; Q-factor; blue-shift; deeply etched InP/InGaAsP/InP photonic crystals; focused ion beam milling; infiltration; local digital etching; local post-production processing; masking layer; point defect cavity; red-shift; resonance frequency; Etching; Indium phosphide; Ion beams; Milling; Optical tuning; Particle beam optics; Photonic crystals; Q factor; Resonance; Resonant frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012419

Filename

5012419