Title :
Local digital etching and infiltration for tuning of a H1-cavity in deeply etched InP/InGaAsP/InP photonic crystals
Author :
Kicken, H.H.J.E. ; Alkemade, P.F.A. ; van der Heijden, R.W. ; Karouta, F. ; Nötzel, R. ; van der Drift, E.W.J.M. ; Salemink, H.W.M.
Author_Institution :
COBRA Res. Inst. & Center for Nanomater., Eindhoven Univ. of Technol., Eindhoven
Abstract :
Local post-production processing of single holes in a planar photonic crystal is demonstrated by selectively opening a masking layer by focused ion beam milling. Local tuning was optically demonstrated by both blue-shifting and subsequent red-shifting the resonance frequency of a point defect cavity. Since only a few holes of the PC are affected by the post-processing, the Q-factor is not significantly changed. This method can be applied to precisely control the resonant frequency, and can also be used for mode selective tuning.
Keywords :
III-V semiconductors; etching; focused ion beam technology; gallium arsenide; indium compounds; milling; photonic crystals; point defects; red shift; InP-InGaAsP-InP; Q-factor; blue-shift; deeply etched InP/InGaAsP/InP photonic crystals; focused ion beam milling; infiltration; local digital etching; local post-production processing; masking layer; point defect cavity; red-shift; resonance frequency; Etching; Indium phosphide; Ion beams; Milling; Optical tuning; Particle beam optics; Photonic crystals; Q factor; Resonance; Resonant frequency;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012419
