DocumentCode :
1715163
Title :
An electrically driven quasi-L2 photonic crystal nano-cavity with a small mode volume
Author :
Tseng, Yen-Chun ; Chi, Tzu-Yi ; Chen, Wen-Yen ; Chiu, Pei-Chin ; Wang, Chun-Jun ; Hsu, Tzu-Min ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli
fYear :
2009
Firstpage :
35
Lastpage :
36
Abstract :
In recent years, the theories and technologies of optically pump photonic crystal (PC) devices, such as PC lasers and single photon sources, have been investigated extensively. However, progress on electrically driven PC devices has not been as successful. In 2004, Park et al. demonstrate an electrically driven PC laser, which has a sub-micrometer semiconductor post at the center of the single cell PC cavity [1]. The central post acts as an electrical conduction channel as well as a heat sinker nicely. On the other hand, to achieve efficient PC devices, such as lasers and single photon sources, PC cavities with not only high Q values but also small mode-volumes (Vm) are necessary. Among the reported PC cavities, L3 cavity, modified-H1 cavity, and quasi-L2 (qL2) cavity are good candidates for realizing high efficiency PC devices [2~4]. Both the L3 and modified-H1 cavities provide a central mode with very high Q values while the qL2 cavity has a dipole mode with an extremely small mode-volume (~0.019mum3) at the central region. Therefore, the characteristics of the aforementioned PC cavities would suffer from the presence of the central post in terms of mode confinement and integrity. In this work, we propose an oxygen-ion implantation method to replace the central post. An electrically driven InAs quantum dot (QDs) light-emitting diode with qL2 PC cavity is demonstrated.
Keywords :
III-V semiconductors; indium compounds; ion implantation; laser cavity resonators; light emitting diodes; nanophotonics; optical pumping; photonic crystals; semiconductor quantum dots; H1 cavity; InAs; electrical conduction channel; electrically driven quantum dot light-emitting diode; electrically driven quasiL2 photonic crystal nanocavity; mode confinement; optically pump photonic crystal devices; oxygen-ion implantation method; photonic crystal lasers; single photon sources; submicrometer semiconductor; Heat sinks; Laser excitation; Laser modes; Laser theory; Optical devices; Optical pumping; Photonic crystals; Pump lasers; Resistance heating; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
ISSN :
1092-8669
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2009.5012420
Filename :
5012420
Link To Document :
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