Improvement of 1.55 µm InAs QD laser using vicinal (001)InP substrate

Author

Elias, G. ; Letoublon, A. ; Piron, R. ; Alghraibi, I. ; Tavernier, K. ; Chevalier, N. ; Bertru, N. ; Le Corre, A. ; Loualiche, S.

Author_Institution

INSA, Rennes

fYear

2009

Firstpage

41

Lastpage

44

Abstract

We present an improvement of threshold current density of InAs QD lasers emitting at 1.55 mum on vicinal InP(001) substrate. High round shaped QDs density were achieved by combining the right off-cut direction of the InP(001) substrate with the optimized arsenic flux. A maximum QDs density of 9 times 10¹⁰ cm^-2 was obtained using a low arsine flow rate and an InP(001) substrate misoriented toward the direction. Room temperature laser emission around 1.55 mum from round shaped quantum dots was obtained with a threshold current density of 1 kA/cm² from 1 mm long cavity.

Keywords

III-V semiconductors; current density; indium compounds; quantum dot lasers; InAs; InP; InP(001) substrate; current density; laser emission; optimized arsenic flux; quantum dot laser; round shaped quantum dots; temperature 293 K to 298 K; wavelength 1.55 mum; Gallium arsenide; Indium phosphide; Nanostructures; Optical materials; Quantum dot lasers; Quantum dots; Substrates; Surface emitting lasers; Temperature; Threshold current; InP(001); Laser; quantum dots Photoluminescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012422

Filename

5012422