Title :
Improvement of 1.55 µm InAs QD laser using vicinal (001)InP substrate
Author :
Elias, G. ; Letoublon, A. ; Piron, R. ; Alghraibi, I. ; Tavernier, K. ; Chevalier, N. ; Bertru, N. ; Le Corre, A. ; Loualiche, S.
Author_Institution :
INSA, Rennes
Abstract :
We present an improvement of threshold current density of InAs QD lasers emitting at 1.55 mum on vicinal InP(001) substrate. High round shaped QDs density were achieved by combining the right off-cut direction of the InP(001) substrate with the optimized arsenic flux. A maximum QDs density of 9 times 1010 cm-2 was obtained using a low arsine flow rate and an InP(001) substrate misoriented toward the direction. Room temperature laser emission around 1.55 mum from round shaped quantum dots was obtained with a threshold current density of 1 kA/cm2 from 1 mm long cavity.
Keywords :
III-V semiconductors; current density; indium compounds; quantum dot lasers; InAs; InP; InP(001) substrate; current density; laser emission; optimized arsenic flux; quantum dot laser; round shaped quantum dots; temperature 293 K to 298 K; wavelength 1.55 mum; Gallium arsenide; Indium phosphide; Nanostructures; Optical materials; Quantum dot lasers; Quantum dots; Substrates; Surface emitting lasers; Temperature; Threshold current; InP(001); Laser; quantum dots Photoluminescence;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012422
