Surface states passivation for and regrowth around nanoposts formed for the fabrication of InP-based intersubband quantum box lasers

Author

Rathi, M.K. ; Tsvid, G.G. ; Shin, J.C. ; Khandekar, A.A. ; Botez, D.D. ; Kuech, T.F.

Author_Institution

Dept. of Chem. & Biol. Eng., Univ. of Wisconsin-Madison, Madison, WI

fYear

2009

Firstpage

83

Lastpage

86

Abstract

Passivation of interfaces corresponding to the nanoposts´ sidewalls in InP-based intersubband quantum-box (IQB) lasers has resulted in interfacial-state densities < 10¹¹/cm². High-quality regrowths of semi-insulating InP around dry-etched, passivated, 40 nm-diameter nanoposts were realized.

Keywords

III-V semiconductors; etching; gallium arsenide; indium compounds; interface states; nanostructured materials; nanotechnology; passivation; quantum dot lasers; semiconductor quantum dots; surface states; InGaAs-InP; dry-etching; interfacial-state densities; intersubband quantum box lasers; nanoposts; size 40 nm; surface states passivation; Etching; Indium gallium arsenide; Indium phosphide; Nanobioscience; Optical device fabrication; Passivation; Plasma applications; Plasma density; Surface emitting lasers; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012428

Filename

5012428