Title :
3D effects in VLSI/ULSI MOSFETs: a novel analytical approach to model threshold voltage
Author :
Lahiri, S.K. ; Das, M.K. ; Gupta, A. Das ; Manna, I.
Author_Institution :
Microelectron. Centre, Indian Inst. of Technol., Kharagpur, India
Abstract :
An analytical model has been proposed to simulate the threshold voltage (VT) of 3D MOSFETs in advanced VLSI/ULSI chips. The model is a quasi-3D extension of a rigorous analytical 2D model and is much faster than a numerical 3D model for computing VT. Computations have been carried out to verify the present quasi-3D model with the available experimental data and a numerical 3D model-MICROMOS
Keywords :
MOS integrated circuits; VLSI; insulated gate field effect transistors; semiconductor device models; 3D effects; MICROMOS; ULSI MOSFETs; VLSI MOSFETs; analytical model; numerical 3D model; threshold voltage modelling; Analytical models; Circuit simulation; Equations; Implants; MOSFETs; Microelectronics; Numerical models; Threshold voltage; Ultra large scale integration; Very large scale integration;
Conference_Titel :
VLSI Design, 1994., Proceedings of the Seventh International Conference on
Conference_Location :
Calcutta
Print_ISBN :
0-8186-4990-9
DOI :
10.1109/ICVD.1994.282713
