A 350 W, 790 to 960 MHz wideband LDMOS doherty amplifier using a modified combining scheme

Author

Wu, David Yu-Ting ; Annes, Justin ; Bokatius, Mario ; Hart, Phil ; Krvavac, Enver ; Tucker, Geoff

Author_Institution

Freescale Semicond. Inc., Tempe, AZ, USA

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

A modified Doherty combining scheme is proposed that eases the impedance matching requirement and enables excellent AM/AM, AM/PM, and wide bandwidth in practical designs. A 350 W, 790 to 960 MHz symmetrical LDMOS Doherty amplifier measured 20 to 21 dB gain as well as peak and back-off efficiencies of 56% to 61% and 48% to 50% respectively across the band. The amplifier achieved excellent linearization results when driven with wideband 20 and 50 MHz WCDMA signals and a 35 MHz GMSK signal.

Keywords

MOS integrated circuits; wideband amplifiers; GMSK signal; WCDMA signals; efficiency 48 percent to 50 percent; efficiency 56 percent to 61 percent; frequency 20 MHz; frequency 35 MHz; frequency 50 MHz; frequency 790 MHz to 960 MHz; gain 20 dB to 21 dB; modified combining scheme; power 350 W; wideband LDMOS doherty amplifier; Equations; Multiaccess communication; Radio access networks; Radio frequency; Spread spectrum communication; Wideband; broadband amplifiers; high power amplifiers; power MOSFET; radio frequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848577

Filename

6848577