Optimization of 1550nm InAs/InP Quantum Dash and Quantum Dot based semiconductor optical amplifier

Author

Pommereau, F. ; Brenot, R. ; Rousseau, B. ; Martin, F. ; Poingt, F. ; LeGouezigou, L. ; Le Gouezigou, O. ; Derouin, E. ; Drisse, O. ; Lelarge, F. ; Patriarche, G.

Author_Institution

III-V Lab., Alcatel-Thales, Marcoussis

fYear

2009

Firstpage

339

Lastpage

342

Abstract

We demonstrate that the combination of Quantum Dots and Quantum Dashes (QD) structures with buried ridge stripe technology allows to achieve QD semiconductor amplifier (SOA) with an internal gain of 30dB for an injected current of 350 mA. Using optimized taper configuration, the beam divergence and the coupling losses are reduced down to 18degtimes22deg and ~ 3 dB, respectively. It opens the way to an investigation of nonlinear properties and wavelength conversion scheme in high gain QD-SOA and to a fair comparison with SOA based on conventional bulk or multiple quantum wells material.

Keywords

III-V semiconductors; indium compounds; optimisation; semiconductor optical amplifiers; semiconductor quantum dots; InAs-InP; beam divergence; current 350 mA; gain 3 dB; gain 30 dB; multiple quantum wells material; nonlinear properties; optimization; ridge stripe technology; semiconductor optical amplifier; semiconductor quantum dash; semiconductor quantum dot; Indium phosphide; Nanostructures; Optical fiber devices; Optical wavelength conversion; Performance gain; Quantum dots; Semiconductor optical amplifiers; Substrates; Temperature; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012433

Filename

5012433