Title :
Optimization of 1550nm InAs/InP Quantum Dash and Quantum Dot based semiconductor optical amplifier
Author :
Pommereau, F. ; Brenot, R. ; Rousseau, B. ; Martin, F. ; Poingt, F. ; LeGouezigou, L. ; Le Gouezigou, O. ; Derouin, E. ; Drisse, O. ; Lelarge, F. ; Patriarche, G.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis
Abstract :
We demonstrate that the combination of Quantum Dots and Quantum Dashes (QD) structures with buried ridge stripe technology allows to achieve QD semiconductor amplifier (SOA) with an internal gain of 30dB for an injected current of 350 mA. Using optimized taper configuration, the beam divergence and the coupling losses are reduced down to 18degtimes22deg and ~ 3 dB, respectively. It opens the way to an investigation of nonlinear properties and wavelength conversion scheme in high gain QD-SOA and to a fair comparison with SOA based on conventional bulk or multiple quantum wells material.
Keywords :
III-V semiconductors; indium compounds; optimisation; semiconductor optical amplifiers; semiconductor quantum dots; InAs-InP; beam divergence; current 350 mA; gain 3 dB; gain 30 dB; multiple quantum wells material; nonlinear properties; optimization; ridge stripe technology; semiconductor optical amplifier; semiconductor quantum dash; semiconductor quantum dot; Indium phosphide; Nanostructures; Optical fiber devices; Optical wavelength conversion; Performance gain; Quantum dots; Semiconductor optical amplifiers; Substrates; Temperature; US Department of Transportation;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012433
