Title :
Radiation trapping of the Hg 185 nm resonance line
Author :
Lawler, J.E. ; Curry, J.J. ; Mennigen, K.L.
Author_Institution :
Wisconsin Univ., Madison, WI, USA
Abstract :
Summary form only given. The trapped decay rate of the 6/sup 1/P/sub 1/ level at 185 nm was measured as a function of cold spot temperature (Hg density) and buffer gas pressure in cylindrical sealed fused silica cells. The decay rates were obtained using time-resolved, laser induced fluorescence after multi step laser excitation at 253.7 nm and 312.6 nm. Cold spot temperatures from 25/spl deg/C to 100/spl deg/C were studied. The Hg densities for this temperature range with no buffer gas yield the lowest possible trapped decay rates due to partial frequency redistribution. Argon buffer gas pressures of 3 and 30 Torr were also studied. The results are in agreement with the afterglow data of Post (1986) for zero buffer gas pressure. Monte Carlo simulations of radiation transport in the cell, including the effects of hyperfine and isotope structure and the effects of foreign gas broadening, agree well with the experimental data.
Keywords :
Monte Carlo methods; afterglows; fluorescence; mercury (metal); plasma diagnostics; plasma pressure; plasma simulation; plasma temperature; resonant states; time resolved spectra; 185 nm; 25 to 100 C; 253.7 nm; 312.6 nm; 6/sup 1/P/sub 1/ level; Ar buffer gas pressures; Hg; Hg 185 nm resonance line; Hg density; Monte Carlo simulations; buffer gas pressure; cold spot temperature; cylindrical sealed fused silica cells; foreign gas broadening; hyperfine structure; isotope structure; multi step laser excitation; partial frequency redistribution; radiation transport; radiation trapping; time-resolved laser induced fluorescence; trapped decay rate; trapped decay rates; Density measurement; Fluorescence; Frequency; Gas lasers; Laser excitation; Mercury (metals); Pressure measurement; Resonance; Silicon compounds; Temperature distribution;
Conference_Titel :
Plasma Science, 1999. ICOPS '99. IEEE Conference Record - Abstracts. 1999 IEEE International Conference on
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5224-6
DOI :
10.1109/PLASMA.1999.829631