Title :
Optical absorption coefficient of carbon-doped GaAs epitaxial layer by means of propagation -loss measurement of waveguide for long wavelength VCSEL
Author :
Kageyama, Takeo ; Kiyota, Kazuaki ; Shimizu, Hitoshi ; Kawakita, Yasumasa ; Iwai, Norihiro ; Takaki, Keishi ; Imai, Suguru ; Funabashi, Masaki ; Tsukiji, Naoki ; Kasukawa, Akihiko
Author_Institution :
Yokohama R&D Lab., Furukawa Electr. Co., Ltd., Ichihara
Abstract :
The optical absorption coefficient (alpha) for carbon-doped GaAs epitaxial layer by CBr4 with doping range from 1018 to 1020 cm-3 was measured for the first time. Obtained alphaGaAs:C was 2-times larger than alphaGaAs:Zn at 1300 nm.
Keywords :
III-V semiconductors; absorption coefficients; carbon; epitaxial growth; gallium arsenide; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; surface emitting lasers; GaAs:C; doping; epitaxial layer; long wavelength VCSEL; molecular beam epitaxy grown; optical absorption coefficient; propagation -loss measurement; wavelength 1300 nm; Absorption; Doping; Epitaxial layers; Etching; Gallium arsenide; Optical films; Optical propagation; Optical waveguides; Vertical cavity surface emitting lasers; Wavelength measurement;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012436
