DocumentCode
1715672
Title
High resolution imaging of InAs/InP single quantum dots by low-voltage cathodoluminescence
Author
Dupuy, E. ; Pauc, N. ; Drouin, D. ; Xu, G. ; Gendry, M. ; Morris, D.
Author_Institution
Dept. de Phys., Univ. de Sherbrooke, Sherbrooke, QC
fYear
2009
Firstpage
355
Lastpage
357
Abstract
We have performed high spatial resolution cathodoluminescence images of single InAs/InP quantum dots. Carrier diffusion lengths in the wetting layer below single dots are evaluated as a function of carrier injection, temperature and sample doping.
Keywords
III-V semiconductors; carrier lifetime; cathodoluminescence; charge injection; indium compounds; semiconductor quantum dots; wetting; InAs-InP; carrier diffusion lengths; carrier injection; high spatial resolution imaging; low-voltage cathodoluminescence images; sample doping; semiconductor quantum dots; wetting layer; Doping; High-resolution imaging; Indium phosphide; Length measurement; Performance evaluation; Quantum computing; Quantum dots; Scanning electron microscopy; Spatial resolution; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location
Newport Beach, CA
ISSN
1092-8669
Print_ISBN
978-1-4244-3432-9
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2009.5012437
Filename
5012437
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