Title :
High resolution imaging of InAs/InP single quantum dots by low-voltage cathodoluminescence
Author :
Dupuy, E. ; Pauc, N. ; Drouin, D. ; Xu, G. ; Gendry, M. ; Morris, D.
Author_Institution :
Dept. de Phys., Univ. de Sherbrooke, Sherbrooke, QC
Abstract :
We have performed high spatial resolution cathodoluminescence images of single InAs/InP quantum dots. Carrier diffusion lengths in the wetting layer below single dots are evaluated as a function of carrier injection, temperature and sample doping.
Keywords :
III-V semiconductors; carrier lifetime; cathodoluminescence; charge injection; indium compounds; semiconductor quantum dots; wetting; InAs-InP; carrier diffusion lengths; carrier injection; high spatial resolution imaging; low-voltage cathodoluminescence images; sample doping; semiconductor quantum dots; wetting layer; Doping; High-resolution imaging; Indium phosphide; Length measurement; Performance evaluation; Quantum computing; Quantum dots; Scanning electron microscopy; Spatial resolution; Temperature;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012437
