DocumentCode
171568
Title
Recent progress in scaling InP HEMT TMIC technology to 850 GHz
Author
Deal, W.R. ; Leong, Kevin ; Zamora, Alejandro ; Radisic, Vesna ; Mei, X.B.
Author_Institution
Northrop Grumman Corp., Redondo Beach, CA, USA
fYear
2014
fDate
1-6 June 2014
Firstpage
1
Lastpage
3
Abstract
In this paper, recent work on pushing InP HEMT amplifier technology to 850 GHz is reported. In particular, we have demonstrated on-wafer gain at this frequency. To our knowledge, this is the first time gain has been reported at this frequency. This achievement is possible by transistor scaling, frontside and backside feature scaling and detailed transistor modeling and design.
Keywords
III-V semiconductors; high electron mobility transistors; indium compounds; semiconductor device models; submillimetre wave transistors; HEMT TMIC technology; HEMT amplifier technology; InP; backside feature scaling; frequency 850 GHz; frontside feature scaling; terahertz monolithic integrated circuit; Abstracts; Indexes; Indium phosphide; mHEMTs; Terahertz; low noise amplifiers; power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/MWSYM.2014.6848588
Filename
6848588
Link To Document