Title :
Recent progress in scaling InP HEMT TMIC technology to 850 GHz
Author :
Deal, W.R. ; Leong, Kevin ; Zamora, Alejandro ; Radisic, Vesna ; Mei, X.B.
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA, USA
Abstract :
In this paper, recent work on pushing InP HEMT amplifier technology to 850 GHz is reported. In particular, we have demonstrated on-wafer gain at this frequency. To our knowledge, this is the first time gain has been reported at this frequency. This achievement is possible by transistor scaling, frontside and backside feature scaling and detailed transistor modeling and design.
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; semiconductor device models; submillimetre wave transistors; HEMT TMIC technology; HEMT amplifier technology; InP; backside feature scaling; frequency 850 GHz; frontside feature scaling; terahertz monolithic integrated circuit; Abstracts; Indexes; Indium phosphide; mHEMTs; Terahertz; low noise amplifiers; power amplifiers;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848588
