Title :
Technology CAD: process and device simulation
Author :
Kosina, H. ; Selberherr, S.
Abstract :
The state of the art in self-consistent numerical modeling of semiconductor devices and their fabrication processes is reviewed. Particular emphasis is put on the models for dopant profile formation, namely ion-implantation and annealing, and on models for carrier transport
Keywords :
CAD; annealing; doping profiles; ion implantation; semiconductor device models; semiconductor process modelling; annealing; carrier transport models; device simulation; dopant profile formation; ion-implantation; process simulation; self-consistent numerical modeling; semiconductor devices; technology CAD;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.632866
