DocumentCode
1715827
Title
40-Gbit/s, uncooled (−15 to 80°C) operation of a 1.55-µm, InGaAlAs, electroabsorption modulated laser for very short reach applications
Author
Kobayashi, Wataru ; Yamanaka, Takayuki ; Arai, Masakazu ; Fujiwara, Naoki ; Fujisawa, Takeshi ; Tsuzuki, Ken ; Ito, Toshio ; Kondo, Yasuhiro ; Kano, Fumiyoshi
Author_Institution
Photonics Labs., NTT Corp., Atsugi
fYear
2009
Firstpage
367
Lastpage
370
Abstract
A 2-km 40-Gb/s transmission from -15 to 80degC is demonstrated using a 1.55-mum InGaAlAs EML for the first time. A power penalty below 2 dB with a dynamic extinction ratio of over 8.2 dB is achieved at -15degC.
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; electro-optical modulation; electroabsorption; extinction coefficients; gallium arsenide; indium compounds; integrated optics; semiconductor lasers; InGaAlAs; dynamic extinction ratio; electroabsorption modulated laser; integrated DFB laser; integrated distributed feedback lasers; optical transmitter; temperature -15 C to 80 C; wavelength 1.55 mum; Extinction ratio; 40 Gbit/s; Electroabsorption; InGaAlAs; Laser; Uncooled operation; components; modulator;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location
Newport Beach, CA
ISSN
1092-8669
Print_ISBN
978-1-4244-3432-9
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2009.5012444
Filename
5012444
Link To Document