Title :
1.3-µm InGaAlAs/InP-AlGaAs/GaAs wafer-fused VCSELs with 10-Gb/s modulation speed up to 100°C
Author :
Mereuta, A. ; Sirbu, A. ; Caliman, A. ; Iakovlev, V. ; Suruceanu, G. ; Kapon, E.
Author_Institution :
Lab. of Phys. of Nanostruct., Ecole Polytech. Fed. de Lausanne, Lausanne
Abstract :
10-Gb/s modulation speed up to 100degC temperature is achieved with wafer-fused VCSELs incorporating re-grown tunnel junction and emitting more than 1-mW single mode power at the 1300-nm waveband in the full temperature range.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; laser noise; semiconductor device noise; semiconductor lasers; surface emitting lasers; tunnelling; vapour phase epitaxial growth; InGaAlAs-InP-AlGaAs-GaAs; LP MOVPE; modulation speed; relative intensity noise spectra; tunnel junction; vertical cavity surface emitting lasers; wafer-fused VCSEL; wavelength 1.3 mum; Fiber lasers; Gallium arsenide; High speed optical techniques; Laser modes; Optical modulation; P-n junctions; Power generation; Power lasers; Temperature distribution; Vertical cavity surface emitting lasers; (140.0140) Lasers and laser optics; (140.7260) Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012446
