Title :
Fully integrated high efficiency K-band PA in 0.18 µm CMOS technology
Author :
Portela, Henrique ; Subramanian, Viswanathan ; Boeck, Georg
Abstract :
A fully integrated 2 stage K-band power amplifier is designed, fabricated and measured. The amplifier is realized utilizing standard 0.18 μm CMOS process. A novel simplified matching and bias network is used in order to reduce the input and output losses and to achieve a high output power and PAE. At 24 GHz, the measured results of the amplifier are, a small-signal power gain of 16.2 dB, a maximum output power of 17.5 dBm, 13.6 dBm of output power at 1 dB compression point and a peak PAE of 22.5 %. To the best of the author´s knowledge, this is the highest PAE ever reported for a CMOS power amplifier in this frequency range using 0.18 μm CMOS technology.
Keywords :
CMOS analogue integrated circuits; power amplifiers; CMOS power amplifier; CMOS technology; K-band power amplifier; frequency 24 GHz; gain 16.2 dB; size 0.18 micron; CMOS technology; Frequency; Inductors; K-band; MOSFETs; Power amplifiers; Power generation; Power transmission lines; Spirals; Voltage;
Conference_Titel :
Microwave and Optoelectronics Conference (IMOC), 2009 SBMO/IEEE MTT-S International
Conference_Location :
Belem
Print_ISBN :
978-1-4244-5356-6
Electronic_ISBN :
1679-4389
DOI :
10.1109/IMOC.2009.5427557