Device performance of light emitting transistors with C-doped and Zn-doped base layers

Author

Huang, Y. ; Ryou, J.-H. ; Dupuis, R.D. ; Dixon, F. ; Holonyak, N., Jr. ; Feng, M.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

2009

Firstpage

387

Lastpage

390

Abstract

N-InP/p-InAlGaAs/N-InAlAs light emitting transistors (LETs) operating at ~1.55 mum were investigated. Both carbon (C) and zinc (Zn) were used as the p-type dopant of the base layers. It was found that C stays in place while Zn diffuses into the emitter and the base active region, resulting in compromised electrical performance and light output intensity. On the other hand, due to a short minority carrier lifetime, LETs with the C-doped base have a much smaller current gain than LETs with the Zn-doped base.

Keywords

III-V semiconductors; aluminium compounds; carbon; carrier lifetime; diffusion; heterojunction bipolar transistors; indium compounds; light emitting diodes; semiconductor doping; zinc; InP-InAlGaAs-InAlAs:C; InP-InAlGaAs-InAlAs:Zn; current gain; diffusion; doping; electrical performance; heterojunction bipolar transistors; light emitting diodes; light emitting transistors; light output intensity; minority carrier lifetime; Charge carrier lifetime; Contacts; Doping; Gold; Heterojunction bipolar transistors; Indium phosphide; Light emitting diodes; Optical materials; Stimulated emission; Zinc; current gain; light emitting transistors; zinc diffusion;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012449

Filename

5012449