Title :
Nano-electronics of high κ dielectrics on InGaAs for key technologies beyond Si CMOS
Author :
Lin, T.D. ; Chang, P. ; Chiu, H.C. ; Chang, Y.C. ; Lin, C.A. ; Chang, W.H. ; Lee, Y.J. ; Chang, Y.H. ; Huang, M.L. ; Kwo, J. ; Hong, M.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu
Abstract :
The surface Fermi level unpinning in InGaAs has been realized with high kappa dielectric growth using molecular beam eitaxy (MBE) and atomic layer deposition (ALD). Furthermore, world-record device performances in self-aligned inversion-channel InGaAs MOSFET and a capacitance equivalent thickness (CET) of les 1 nm in Ga2O3(Gd2O3) and ALD-HfO2 on InGaAs have been achieved.
Keywords :
CMOS integrated circuits; Fermi level; III-V semiconductors; MOSFET; atomic layer deposition; elemental semiconductors; gadolinium compounds; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; nanoelectronics; silicon; Ga2O3; Gd2O3; InGaAs; MOSFET; Si; Si CMOS; atomic layer deposition; capacitance equivalent thickness; high k dielectrics; molecular beam eitaxy; nano-electronics; surface Fermi level unpinning; Aluminum oxide; CMOS technology; Capacitance-voltage characteristics; Dielectrics; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; MOSFET circuits; Tin; Transconductance;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012451
