Title :
High performance InP HEMT technology with multiple interconnect layers for advanced RF and mixed signal circuits
Author :
Ha, W. ; Shinohara, K. ; Griffith, Z. ; Urteaga, M. ; Chen, P. ; Rowell, P. ; Brar, B.
Author_Institution :
Teledyne Sci. & Imaging Co., Thousand Oaks, CA
Abstract :
We report the development of high performance InP high electron mobility transistors (HEMTs) supported with three interconnect metal layers suitable for advanced RF and mixed signal integrated circuits. Depletion and enhancement mode devices with 35 nm gate-lengths are available with fT / fmax of 536/307 GHz and fT/fmax of 550/346 GHz, respectively. The process shows excellent device uniformity, yield, and reliability. The technology was used to demonstrate broadband feedback-linearized amplifiers with 20 dB S21 gain and an OIP3 of 37 dBm at 2 GHz operation, where PDC is only 313 mW.
Keywords :
III-V semiconductors; feedback amplifiers; high electron mobility transistors; indium compounds; D-mode transistor; E-mode transistor; InP; InP high electron mobility transistors; RF circuits; broadband feedback- linearized amplifiers; depletion mode; enhancement mode; feedback amplifier; frequency 2 GHz; interconnect metal layers; mixed signal integrated circuits; power 313 mW; size 35 nm; HEMTs; Indium phosphide; Integrated circuit interconnections; Integrated circuit reliability; Integrated circuit technology; Integrated circuit yield; MODFETs; Mixed analog digital integrated circuits; RF signals; Radio frequency; D-mode transistor; E-mode transistor; InP high electron mobility transistor; feedback amplifier; low loss dielectric layer; mutiple interconnect layer;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012455
