Title :
Cryogenic small-signal and noise performance of 32nm SOI CMOS
Author :
Coskun, Ahmet Hakan ; Bardin, Joseph C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Massachusetts Amherst, Amherst, MA, USA
Abstract :
The noise performance of a 32 nm SOI CMOS process is systematically studied for ambient temperatures in the range of 6-293 K. For a fixed transconductance bias, an order of magnitude improvement in calculated Tmin is observed by cooling from room temperature to 6 K. This improvement is largely attributed to improvements in the device resistances as well as the reduction in thermal noise associated with cooling.
Keywords :
CMOS analogue integrated circuits; cryogenic electronics; integrated circuit noise; low-temperature techniques; silicon-on-insulator; thermal noise; ambient temperature; cooling; cryogenic small-signal SOI CMOS; device resistance; fixed transconductance bias; magnitude improvement; noise performance; room temperature; silicon-on-insulator complementary metal oxide semiconductor; size 32 nm; temperature 6 K to 293 K; thermal noise reduction; Cooling; Cryogenics; Indium phosphide; Noise; Noise measurement; Temperature distribution; Ultra low noise amplifier; cryogenic CMOS; noise parameters; radio astronomy;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848614
