DocumentCode :
1716258
Title :
A 40-nm-Gate InAs/In0.7Ga0.3As Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT
Author :
Kuo, Chien-I ; Hsu, Heng-Tung ; Wu, Chien-Ying ; Chang, Edward Yi ; Miyamoto, Yasuyuki ; Chen, Yu-Lin ; Biswas, Dhrubes
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu
fYear :
2009
Firstpage :
128
Lastpage :
131
Abstract :
A 40-nm T-gate high-electron-mobility-transistor with InAs/In0.7Ga0.3As composite-channel has been fabricated. The device exhibits a transconductance (gm) of 2200 mS/mm, a cutoff frequency fT of 506 GHz and a minimum noise figure of 1.21 dB at a frequency of 58 GHz. These performances make the device well-suited for millimeter-wave or sub-millimeter-wave applications.
Keywords :
gallium arsenide; high electron mobility transistors; indium compounds; HEMT; InAs-In0.7Ga0.3As; composite-channel; frequency 58 GHz; high-electron- mobility-transistor; millimeter-wave; size 40 nm; submillimeter-wave; transconductance; Cutoff frequency; Electron mobility; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Materials science and technology; Noise figure; Wet etching; HEMTs; InAs-channel; sub-millimeter-wave;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
ISSN :
1092-8669
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2009.5012458
Filename :
5012458
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1716258
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