Title :
Inverter transfer curves and SRAM noise margin evaluation based on an ultra-compact MOS model
Author :
Consoli, Elio ; Giustolisi, Gianluca ; Palumbo, Gaetano
Author_Institution :
Dipt. di Ing. Elettr., Elettron. ed Inf., Univ. degli Studi di Catania, Catania, Italy
Abstract :
In this paper, an ultra-compact I-V nanometer MOS model, suitable for the analysis of digital circuits, is first proposed. All the main physical effects are included through nine parameters and the model is shown to allow an accurate and quick estimation of DC transfer curves or SRAM noise margins.
Keywords :
MOS digital integrated circuits; MOSFET; SRAM chips; invertors; nanoelectromechanical devices; DC transfer curve estimation; SRAM noise margin evaluation; digital circuit analysis; inverter transfer curve evaluation; ultracompact I-V nanometer MOS model; Integrated circuit modeling; Inverters; MOS devices; MOSFET circuits; Noise; Random access memory; Semiconductor device modeling;
Conference_Titel :
Circuit Theory and Design (ECCTD), 2011 20th European Conference on
Conference_Location :
Linkoping
Print_ISBN :
978-1-4577-0617-2
Electronic_ISBN :
978-1-4577-0616-5
DOI :
10.1109/ECCTD.2011.6043401
