DocumentCode
1716303
Title
An ultra-compact MOS model in nanometer technologies
Author
Consoli, Elio ; Giustolisi, Gianluca ; Palumbo, Gaetano
Author_Institution
Dipt. di Ing. Elettr., Elettron. ed Inf., Univ. degli Studi di Catania, Catania, Italy
fYear
2011
Firstpage
520
Lastpage
523
Abstract
In this paper, an ultra-compact model for nanometer MOS transistors is proposed. Starting from modified and more accurate versions of classical compact models, all the main physical effects that are predominant in nanometer technologies are included in an extremely simple way. Model effectiveness is verified through simulations in a 65-nm CMOS technology.
Keywords
MOSFET; nanoelectronics; semiconductor device models; CMOS technology; classical compact models; model effectiveness; nanometer MOS transistors; nanometer technologies; size 65 nm; ultra-compact MOS model; Analytical models; Approximation methods; Data models; Integrated circuit modeling; MOSFET circuits; MOSFETs; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuit Theory and Design (ECCTD), 2011 20th European Conference on
Conference_Location
Linkoping
Print_ISBN
978-1-4577-0617-2
Electronic_ISBN
978-1-4577-0616-5
Type
conf
DOI
10.1109/ECCTD.2011.6043403
Filename
6043403
Link To Document