Title :
An ultra-compact MOS model in nanometer technologies
Author :
Consoli, Elio ; Giustolisi, Gianluca ; Palumbo, Gaetano
Author_Institution :
Dipt. di Ing. Elettr., Elettron. ed Inf., Univ. degli Studi di Catania, Catania, Italy
Abstract :
In this paper, an ultra-compact model for nanometer MOS transistors is proposed. Starting from modified and more accurate versions of classical compact models, all the main physical effects that are predominant in nanometer technologies are included in an extremely simple way. Model effectiveness is verified through simulations in a 65-nm CMOS technology.
Keywords :
MOSFET; nanoelectronics; semiconductor device models; CMOS technology; classical compact models; model effectiveness; nanometer MOS transistors; nanometer technologies; size 65 nm; ultra-compact MOS model; Analytical models; Approximation methods; Data models; Integrated circuit modeling; MOSFET circuits; MOSFETs; Semiconductor device modeling;
Conference_Titel :
Circuit Theory and Design (ECCTD), 2011 20th European Conference on
Conference_Location :
Linkoping
Print_ISBN :
978-1-4577-0617-2
Electronic_ISBN :
978-1-4577-0616-5
DOI :
10.1109/ECCTD.2011.6043403
