Title :
High detection efficiency InGaAs/InP single photon avalanche photodiodes
Author :
Gu, Yonglin ; Wu, Xiucheng ; Choa, Fow-Sen
Author_Institution :
Dept. of CSEE, Univ. of Maryland Baltimore County, Baltimore, MD
Abstract :
InGaAs/InP avalanche photodiodes with high detection efficiency at 1.55 mum is reported in Geiger mode for single photon detection. In addition, mechanisms to improve device dark count rate versus photon detection efficiency performance are reported.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; Geiger mode; InGaAs-InP; device dark count rate; photon detection efficiency; single photon avalanche photodiodes; single photon detection; Avalanche photodiodes; Cooling; Counting circuits; Indium gallium arsenide; Indium phosphide; Infrared detectors; Optical attenuators; Optical fiber communication; Superconducting device noise; Superconducting materials;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012462
