مرکز منطقه ای اطلاع رساني علوم و فناوري - Reliability of bond over active pad structures for 0.13-μm CMOS technology

DocumentCode :

1716437

Title :

Reliability of bond over active pad structures for 0.13-μm CMOS technology

Author :

Hess, Kevin J. ; Downey, Susan H. ; Halt, G.B. ; Lee, Tom ; Mercado, Lei L. ; Miter, J.W. ; Ng, Willson C. ; Wontor, David G.

Author_Institution :

Motorola, Inc.

fYear :

2003

Firstpage :

1344

Lastpage :

1349

Keywords :

Assembly; Atherosclerosis; Bonding; CMOS technology; Circuits; Electrostatic discharge; Packaging; Predictive models; Silicon; Stress;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Electronic Components and Technology Conference, 2003. Proceedings. 53rd

ISSN :

0569-5503

Print_ISBN :

0-7803-7791-5

Type :

conf

DOI :

10.1109/ECTC.2003.1216469

Filename :

1216469

Link To Document :