Title :
Reduced frequency dependence of third order nonlinearities in partially-depleted-absorber photodiodes
Author :
Pan, Huapu ; Beling, Andreas ; Chen, Hao ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA
Abstract :
The third-order intercept point (IP3) of an InGaAs/InP partially-depleted-absorber photodiode is characterized. The IP3 has a flat frequency response: a record IP3 of 39 dBm is achieved at 20 GHz.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; InGaAs-InP; flat frequency response; frequency 20 GHz; partially-depleted-absorber photodiode; reduced frequency dependence; third order nonlinearities; third-order intercept point; Capacitance measurement; Doping profiles; Equivalent circuits; Frequency dependence; Frequency measurement; Frequency response; Indium gallium arsenide; Indium phosphide; Photodiodes; Voltage;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012463
