InGaP/GaAs heterojunction phototransistors for ultra-low optical power detection

Author

Byun, Y.W. ; Park, M.S. ; Park, Y.H. ; Cho, Y.C. ; Jang, J.H.

Author_Institution

Dept. of Inf. & Mechatron., Gwangju Inst. of Sci. & Technol., Bukgu

fYear

2009

Firstpage

153

Lastpage

154

Abstract

Optoelectronic conversion gain of floating base InGaP/GaAs heterojunction bipolar phototransistors (HPTs) with and without base contact metal was investigated. The fabricated HPTs without base contact metal showed the higher optical gain compared to those with base contact metal. The devices exhibited very high optical gain of 162 at optical power of 1.74 muW under the 640 nm illumination.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; photodetectors; phototransistors; InGaP-GaAs; contact metal; heterojunction bipolar phototransistors; optoelectronic conversion gain; power 1.74 muW; ultralow optical power detection; wavelength 640 nm; Electrodes; Etching; Gallium arsenide; Gold; Heterojunction bipolar transistors; Low voltage; Optical detectors; Optical devices; Optoelectronic devices; Phototransistors; InGaP/GaAs; optical gain; photodetection; phototransistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012465

Filename

5012465