Title :
InGaP/GaAs heterojunction phototransistors for ultra-low optical power detection
Author :
Byun, Y.W. ; Park, M.S. ; Park, Y.H. ; Cho, Y.C. ; Jang, J.H.
Author_Institution :
Dept. of Inf. & Mechatron., Gwangju Inst. of Sci. & Technol., Bukgu
Abstract :
Optoelectronic conversion gain of floating base InGaP/GaAs heterojunction bipolar phototransistors (HPTs) with and without base contact metal was investigated. The fabricated HPTs without base contact metal showed the higher optical gain compared to those with base contact metal. The devices exhibited very high optical gain of 162 at optical power of 1.74 muW under the 640 nm illumination.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; photodetectors; phototransistors; InGaP-GaAs; contact metal; heterojunction bipolar phototransistors; optoelectronic conversion gain; power 1.74 muW; ultralow optical power detection; wavelength 640 nm; Electrodes; Etching; Gallium arsenide; Gold; Heterojunction bipolar transistors; Low voltage; Optical detectors; Optical devices; Optoelectronic devices; Phototransistors; InGaP/GaAs; optical gain; photodetection; phototransistors;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012465
