Title :
Analysis of contacts configurations of HEMT with ID-VDS curve measurments
Author :
Wang, S.H. ; Tsai, C.C. ; Chang, C.W. ; Wang, H.Y. ; Sun, Yue ; Lin, H.K. ; Tu, L.W.
Author_Institution :
Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
The characteristic of ID-VDS curve is related by applying voltages to Schottky gate in AlGaN/GaN HEMTs. The measurement of drain and source resistances shown that the current increase was caused by inducing the 2DEG charge between drain and source electrodes. In this study, we evaporate different configurations of contacts to analyze its ID-VDS characteristics.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; biological techniques; electric current measurement; gallium compounds; high electron mobility transistors; two-dimensional electron gas; voltage measurement; 2DEG charge; AlGaN-GaN; AlGaN-GaN HEMT; ID-VDS curve measurments; Schottky gate; contact configurations; drain electrodes; drain measurement; source electrodes; source resistances; Aluminum gallium nitride; Biomedical measurement; Current measurement; Gallium nitride; HEMTs; Logic gates; MODFETs; AlGaN/GaN HEMTs; ID-VD characteristic; contacts configurations;
Conference_Titel :
Bioengineering Conference (NEBEC), 2014 40th Annual Northeast
Conference_Location :
Boston, MA
DOI :
10.1109/NEBEC.2014.6972967
