Switchable dual-frequency barium strontium titanate film bulk acoustic resonators

Author

Lee, Victor ; Seungku Lee ; Sis, Seyit Ahmet ; Mortazawi, Amir

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

Innovative frequency selective microwave circuit designs are needed to reduce complexity, size, and cost of multi-standard transceivers. Here, the electric field induced piezoelectricity and electric field dependent permittivity of barium strontium titanate are utilized to design multi-frequency intrinsically switchable film bulk acoustic resonators. Individual resonators with different resonance frequencies are switched on and off by controlling the dc bias voltage applied across their terminals. A switchable dual-frequency resonator consisting of series connected 0.95 GHz and 1.15 GHz resonators is demonstrated. The small size and simple design of multi-frequency BST resonators are attractive for use in oscillators and filters for adaptive and reconfigurable radios.

Keywords

UHF resonators; acoustic resonators; barium compounds; bulk acoustic wave devices; crystal resonators; strontium compounds; Ba_0.5Sr_0.5TiO₃; bulk acoustic resonator; electric field dependent permittivity; electric field induced piezoelectricity; frequency 0.95 GHz; frequency 1.15 GHz; frequency selective microwave circuit design; switchable dual frequency resonator; switchable film resonator; Electrodes; Equations; Loading; Micromechanical devices; Resonator filters; Standards; Switches; Ferroelectric devices; film bulk acoustic resonators (FBARs); radiofrequency micro-electromechanical systems (RF MEMS);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848634

Filename

6848634