Title :
A 0.1–1.2 GHz CMOS ultra-broadband power amplifier
Author :
Haifeng Wu ; Liguo Wang ; Peng Zhou ; Jianguo Ma
Author_Institution :
Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China
Abstract :
A 0.1-1.2 GHz power amplifier using 0.18-μm CMOS technology is presented with a small chip area. With 3.3V supply, the measurement results in this band indicated that the gain is better than 20 dB, the S11 and S22 is less than - 18 dB and -10 dB, respectively. The saturated output power is 20.5 dBm and 19.5 dBm at 433 MHz and 900 MHz with the corresponding PAE of 27% and 19.5%, respectively. The chip area is only 0.414 mm2.
Keywords :
CMOS integrated circuits; UHF power amplifiers; wideband amplifiers; CMOS technology; CMOS ultra-broadband power amplifier; PAE; S11; S22; efficiency 19.5 percent; efficiency 27 percent; frequency 0.1 GHz to 1.2 GHz; voltage 3.3 V; Broadband communication; CMOS integrated circuits; CMOS technology; Educational institutions; Inductors; Mobile communication; Wireless communication; CMOS PA; Cascode; resistive feedback; ultrabroadband;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848635
