• DocumentCode
    171659
  • Title

    A 0.1–1.2 GHz CMOS ultra-broadband power amplifier

  • Author

    Haifeng Wu ; Liguo Wang ; Peng Zhou ; Jianguo Ma

  • Author_Institution
    Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China
  • fYear
    2014
  • fDate
    1-6 June 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A 0.1-1.2 GHz power amplifier using 0.18-μm CMOS technology is presented with a small chip area. With 3.3V supply, the measurement results in this band indicated that the gain is better than 20 dB, the S11 and S22 is less than - 18 dB and -10 dB, respectively. The saturated output power is 20.5 dBm and 19.5 dBm at 433 MHz and 900 MHz with the corresponding PAE of 27% and 19.5%, respectively. The chip area is only 0.414 mm2.
  • Keywords
    CMOS integrated circuits; UHF power amplifiers; wideband amplifiers; CMOS technology; CMOS ultra-broadband power amplifier; PAE; S11; S22; efficiency 19.5 percent; efficiency 27 percent; frequency 0.1 GHz to 1.2 GHz; voltage 3.3 V; Broadband communication; CMOS integrated circuits; CMOS technology; Educational institutions; Inductors; Mobile communication; Wireless communication; CMOS PA; Cascode; resistive feedback; ultrabroadband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium (IMS), 2014 IEEE MTT-S International
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/MWSYM.2014.6848635
  • Filename
    6848635
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=171659