IGZO TFT-Based All-Enhancement Operational Amplifier Bent to a Radius of 5 mm

Author

Zysset, Christoph ; Munzenrieder, N. ; Petti, L. ; Buthe, L. ; Salvatore, G.A. ; Troster, G.

Author_Institution

Inst. for Electron., Swiss Fed. Inst. of Technol. Zurich, Zürich, Switzerland

Volume

34

Issue

11

fYear

2013

fDate

Nov. 2013

Firstpage

1394

Lastpage

1396

Abstract

An all-enhancement operational amplifier operating at 5 V and comprising 16 n-type amorphous indium-gallium-zinc-oxide thin-film transistors (TFTs) is fabricated on a 50 μm thick flexible polyimide substrate. The operational amplifier has an open loop voltage gain of 18.7 dB and a unity-gain frequency of 472 kHz while the common-mode rejection ratio (CMMR) is larger than 40 dB. The mechanical flexibility of the amplifier is demonstrated by bending the circuit to a radius of 5 mm, which corresponds to a tensile strain of 0.5% parallel to the TFT channels. The bent amplifier shows the same output behavior as when flat. The power consumption of the operational amplifier is 900 μW, regardless whether the circuit is flat or bent.

Keywords

amorphous semiconductors; gallium compounds; indium compounds; internal stresses; operational amplifiers; thin film transistors; zinc compounds; IGZO TFT-based all-enhancement operational amplifier; InGaZnO; amorphous indium-gallium- zinc-oxide thin-film transistors; common-mode rejection ratio; frequency 472 kHz; gain 18.7 dB; mechanical flexibility; open loop voltage gain; power 900 muW; power consumption; radius 5 mm; size 50 mum; tensile strain; thick flexible polyimide substrate; unity-gain frequency; voltage 5 V; Frequency measurement; Gain; Strain; Substrates; Thin film transistors; Voltage measurement; Analog circuits; indium–gallium-zinc–oxide (IGZO); operational amplifiers; thin-film circuits; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2280024

Filename

6605493