Title :
Lateral current injection type GaInAsP/InP DFB lasers on SI-InP substrate
Author :
Okumura, Tadashi ; Kurokawa, Munetaka ; Kondo, Daisuke ; Ito, Hitomi ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo
Abstract :
Toward injection type GaInAsP/InP membrane lasers consisting of high index contrast waveguide structure, lateral current injection type distributed-feedback lasers on a semi-insulating InP substrate were realized by an electron-beam lithography and organo-metallic vapor-phase-epitaxial regrowth. Single mode operation with a threshold current of 27 mA and a side-mode suppression ratio of 35dB at a bias current of two times the threshold was obtained at room temperature pulsed condition.
Keywords :
III-V semiconductors; charge injection; distributed feedback lasers; electron beam lithography; gallium compounds; indium compounds; integrated optics; semiconductor lasers; vapour phase epitaxial growth; waveguide lasers; GaInAsP-InP; InP; LSI circuits; current 27 mA; distributed-feedback lasers; electron-beam lithography; high-index contrast waveguide structure; lateral current injection; membrane lasers; organo-metallic vapor-phase-epitaxial regrowth; semiinsulating substrate; threshold current; Biomembranes; Distributed feedback devices; Gratings; Indium phosphide; Optical pumping; Optical refraction; Optical surface waves; Optical variables control; Semiconductor lasers; Substrates; Distributed Feedback laser; Lateral current injection; Membrane structure; Photonic Integrated Circuit;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012472
