DocumentCode :
1716734
Title :
Multiple-wavelength GaInAs/GaAs VCSELs with grading a spacer layer for short reach WDM applications
Author :
Dayal, P. Babu ; Imamura, A. ; Sakaguchi, T. ; Matsutani, A. ; Koyama, F.
Author_Institution :
Microsyst. Res. Center, Tokyo Inst. of Technol., Yokohama
fYear :
2009
Firstpage :
182
Lastpage :
184
Abstract :
We propose and demonstrate a simple method to fabricate the multiple-channel vertical cavity surface emitting laser (VCSEL) arrays emitting at 980 nm by grading the first low-index spacer layer of SiO2/Ta2O5 di-electric mirror using wet etching technique. A multi-step exposure to UV lithography followed by selective wet chemical etching has been done to create spacer layer gradients. A 4-channel 980 nm VCSELs with wavelength span exceeding 30.0 nm are demonstrated. We also show the scalability of 8-channel VCSEL array using the same technique. All VCSELs show good single mode laser performances having the average output power nearly 0.5 mW with the side mode suppression ratios between 30-45 dB.
Keywords :
III-V semiconductors; dielectric materials; etching; gallium arsenide; indium compounds; laser modes; silicon compounds; surface emitting lasers; tantalum compounds; ultraviolet lithography; GaInAs-GaAs-SiO2-Ta2O5; UV lithography; dielectric mirror; low-index spacer layer; multiple-channel vertical cavity surface emitting laser arrays; scalability; single mode laser performances; wavelength 980 nm; wet etching technique; Chemical lasers; Gallium arsenide; Lithography; Mirrors; Optical arrays; Scalability; Surface emitting lasers; Vertical cavity surface emitting lasers; Wavelength division multiplexing; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
ISSN :
1092-8669
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2009.5012473
Filename :
5012473
Link To Document :
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