Title :
Simulation of electrical burnout of MOSFET structures
Author :
Vashchenko, V.A. ; Martynov, Y.B. ; Sinkevitch, V.F.
Abstract :
On the basis of two-dimensional numerical solution of drift-diffusion equations the avalanche injection current instability and filamentation are studied in planar and double diffusion MOSFET structures. It is demonstrated that the breakdown in these structures results in narrow (1÷10 μm) isothermal filament formation during a short time (<1 ns). Filamentation time and filament dimension depend drastically on the current level through the p+ -region. It is proved that high local overheating in the filament region is the cause of local electrical burnout of the MOSFET´s
Keywords :
MOSFET; avalanche breakdown; current distribution; failure analysis; negative resistance; semiconductor device models; semiconductor device reliability; MOSFET structures; avalanche injection current instability; avalanche injection filamentation; breakdown; double diffusion MOSFET; drift-diffusion equations; electrical burnout simulation; filament dimension; filamentation time; high local overheating; narrow isothermal filament formation; negative differential resistance; p+-region current level; planar MOSFET; two-dimensional numerical solution; Electric breakdown; Electric resistance; Feedback; Isothermal processes; MOSFET circuits; Numerical simulation; Power MOSFET; Shape; Temperature distribution; Voltage;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.632870
