Simulation of electrical burnout of MOSFET structures

Author

Vashchenko, V.A. ; Martynov, Y.B. ; Sinkevitch, V.F.

Volume

2

fYear

1997

Firstpage

467

Abstract

On the basis of two-dimensional numerical solution of drift-diffusion equations the avalanche injection current instability and filamentation are studied in planar and double diffusion MOSFET structures. It is demonstrated that the breakdown in these structures results in narrow (1÷10 μm) isothermal filament formation during a short time (<1 ns). Filamentation time and filament dimension depend drastically on the current level through the p⁺-region. It is proved that high local overheating in the filament region is the cause of local electrical burnout of the MOSFET´s

Keywords

MOSFET; avalanche breakdown; current distribution; failure analysis; negative resistance; semiconductor device models; semiconductor device reliability; MOSFET structures; avalanche injection current instability; avalanche injection filamentation; breakdown; double diffusion MOSFET; drift-diffusion equations; electrical burnout simulation; filament dimension; filamentation time; high local overheating; narrow isothermal filament formation; negative differential resistance; p⁺-region current level; planar MOSFET; two-dimensional numerical solution; Electric breakdown; Electric resistance; Feedback; Isothermal processes; MOSFET circuits; Numerical simulation; Power MOSFET; Shape; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1997. Proceedings., 1997 21st International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-3664-X

Type

conf

DOI

10.1109/ICMEL.1997.632870

Filename

632870