Dynamic FET stack control for enhanced efficiency in envelope tracking power amplifiers

Author

Jung-Lin Woo ; Moon-Suk Jeon ; Youngwoo Kwon

Author_Institution

Dept. of ECE, Seoul Nat. Univ., Seoul, South Korea

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

In this work, a dynamic FET stacking is proposed to implement an envelope tracking power amplifier (ET PA) to enhance the efficiency at low VDD and backed-off power range. Quadruple-stacked CMOS power cell is reconfigured to operate as quasi-triple or quasi-double stacks according to the magnitude of the input envelope. The overall ET PA with the proposed RF power amplifier and envelope amplifier fabricated using 0.18-μm SOI CMOS shows an overall efficiency of 46% for 10 MHz LTE and 52% for WCDMA signal, which are 4.5% and 2.8% higher than the static stack ET PA. Adequate linearity has also been demonstrated using the gain and phase step compensation circuitry.

Keywords

CMOS integrated circuits; field effect transistors; radiofrequency power amplifiers; silicon-on-insulator; ET PA; LTE; RF power amplifier; SOI CMOS; WCDMA; dynamic FET stack control; envelope tracking power amplifiers; quadruple-stacked CMOS power cell; size 0.18 mum; CMOS integrated circuits; Gallium arsenide; Multiaccess communication; Peak to average power ratio; Radio frequency; Spread spectrum communication; Switches; CMOS; dynamic stacking; envelope tracking (ET); power amplifier (PA);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848659

Filename

6848659