Title :
Ultra-thin in InAlP/InGaAs heterojunctins grown by metal-organic vapor-phase epitaxy
Author :
Sugiyama, Hiroki ; Yokoyama, Haruki ; Shigekawa, Naoteru ; Enoki, Takatomo ; Teranishi, Atsushi ; Suzuki, Safumi ; Asada, Masahiro
Author_Institution :
Photonics Labs., NTT Corp., Atsugi
Abstract :
This paper reports the metal-organic vapor-phase epitaxy (MOVPE) growth of ultra-thin InAlP/InGaAs heterojunctions for use as wet-etching stoppers in InP-based high electron mobility transistors (HEMTs) and as barriers in resonant tunneling diodes (RTDs). InAlP/InGaAs modulation-doped (MD) heterojunctions with high electron mobility were successfully grown. Practical wet-etching selectivity in even 2-nm-thick InAlP etch stoppers was demonstrated. High peak current density (jP) of 5.4 times 105 A/cm2 with a peak-to-valley ratio (PVRs) of 1.6 was obtained in RTDs with 1.6-nm-thick In0.75Al0.25P barriers, which reflects the excellent abruptness and flatness of the heterointerfaces.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; current density; electron mobility; etching; gallium arsenide; high electron mobility transistors; indium compounds; resonant tunnelling diodes; semiconductor epitaxial layers; semiconductor heterojunctions; vapour phase epitaxial growth; HEMTs; InAlP-InGaAs; MOVPE; current density; electron mobility; high electron mobility transistors; metal-organic vapor-phase epitaxy; resonant tunneling diodes; size 1.6 nm; size 2 nm; ultrathin modulation-doped heterojunctions; wet-etching stoppers; Diodes; Electron mobility; Epitaxial growth; Epitaxial layers; HEMTs; Heterojunctions; Indium gallium arsenide; MODFETs; Resonant tunneling devices; Wet etching;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012488
