• DocumentCode
    1717150
  • Title

    Photoluminescence characteristics of MOCVD grown-InAs quantum dots covered by GaInP layer

  • Author

    Suzuki, Ryo ; Miyamoto, Takahiro ; Sengoku, T. ; Nemoto, Kae ; Tanabe, Shigeo ; Koyama, Fumio

  • Author_Institution
    P.&I. Lab., Tokyo Inst. of Technol., Yokohama
  • fYear
    2009
  • Firstpage
    234
  • Lastpage
    237
  • Abstract
    PL characteristics of MOCVD-grown InAs QDs using a GaInP cover layer were investigated. It is confirmed that the strain modification effect of the cover layer regardless of growth methods is a cause of wavelength shift of QDs.
  • Keywords
    III-V semiconductors; MOCVD coatings; gallium compounds; indium compounds; photoluminescence; semiconductor quantum dots; InAs-GaInP; MOCVD grown quantum dots; cover layer effect; photoluminescence characteristics; strain modification effect; wavelength shift; MOCVD; Photoluminescence; Quantum dots;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
  • Conference_Location
    Newport Beach, CA
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-3432-9
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2009.5012491
  • Filename
    5012491
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1717150