Title :
Photoluminescence characteristics of MOCVD grown-InAs quantum dots covered by GaInP layer
Author :
Suzuki, Ryo ; Miyamoto, Takahiro ; Sengoku, T. ; Nemoto, Kae ; Tanabe, Shigeo ; Koyama, Fumio
Author_Institution :
P.&I. Lab., Tokyo Inst. of Technol., Yokohama
Abstract :
PL characteristics of MOCVD-grown InAs QDs using a GaInP cover layer were investigated. It is confirmed that the strain modification effect of the cover layer regardless of growth methods is a cause of wavelength shift of QDs.
Keywords :
III-V semiconductors; MOCVD coatings; gallium compounds; indium compounds; photoluminescence; semiconductor quantum dots; InAs-GaInP; MOCVD grown quantum dots; cover layer effect; photoluminescence characteristics; strain modification effect; wavelength shift; MOCVD; Photoluminescence; Quantum dots;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012491
