Fabrication and structural characterization of nearly lattice-matched p-ZnSnAs2/n-InP heterojunctions

Author

Asubar, Joel T. ; Nakamura, Shin´ichi ; Jinbo, Yoshio ; Uchitomi, Naotaka

Author_Institution

Dept. of Electr. Eng., Nagaoka Univ. of Technol., Nagaoka

fYear

2009

Firstpage

255

Lastpage

258

Abstract

Rectifying p-ZnSnAs₂/n-InP heterojunctions have been successfully fabricated by growing p-type ZnSnAs₂ epitaxial layers of different thicknesses on n-type InP(001) substrates using molecular beam epitaxy (MBE). The growths were monitored by in-situ reflection high-energy electron diffraction (RHEED). Electron Probe MicroAnalysis (EPMA) investigations have revealed that all the samples are nominally stoichiometric. Reciprocal space mapping of the ~120-nm-thick sample suggests pseudomorphic growth with respect to the InP substrate. High-resolution x-ray diffraction (HR-XRD), Atomic Force Microscopy (AFM), and Transmission Electron Microscopy (TEM) studies suggest high structural qualities of the epitaxial films.

Keywords

III-V semiconductors; X-ray diffraction; atomic force microscopy; electron probe analysis; indium compounds; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; stoichiometry; ternary semiconductors; tin compounds; transmission electron microscopy; zinc compounds; ZnSnAs₂-InP; atomic force microscopy; electron probe microanalysis; high-resolution X-ray diffraction; molecular beam epitaxy; n-type InP(001) substrates; p-ZnSnAs₂/n-InP heterojunctions; p-type ZnSnAs₂ epitaxial layers; pseudomorphic growth; reciprocal space mapping; reflection high-energy electron diffraction; stoichiometry; transmission electron microscopy; Atomic force microscopy; Epitaxial layers; Fabrication; Heterojunctions; Molecular beam epitaxial growth; Monitoring; Optical reflection; Substrates; Transmission electron microscopy; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012494

Filename

5012494