Improvement in luminescence properties of TlInGaAsN/TlInP multi-layers grown by gas source molecular beam epitaxy

Author

Tanaka, Y. ; Hasegawa, S. ; Liu, J.Q. ; Ishimaru, M. ; Asahi, H.

Author_Institution

ISIR, Osaka Univ., Suita

fYear

2009

Firstpage

259

Lastpage

262

Abstract

TlInGaAsN/TlInP/InP hetero-structures were studied for the application to the temperature insensitive wavelength laser diodes. By the introduction of N, the incorporation of Tl was increased, but optical properties were degraded. In order to solve this problem, TlInGaAsN/TlInP multiple layer structures with thin TlInGaAsN layer was proposed and the improvement in optical properties was confirmed.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical multilayers; semiconductor lasers; thallium compounds; TlInGaAsN-TlInP-InP; gas source molecular beam epitaxy; heterostructures; luminescence properties; multilayers; optical properties; temperature insensitive wavelength laser diodes; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Diode lasers; Indium phosphide; Luminescence; Molecular beam epitaxial growth; Nitrogen; Plasma measurements; Plasma temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012495

Filename

5012495