Analytical, Numerical-, and Measurement–Based Methods for Extracting the Electrical Parameters of Through Silicon Vias (TSVs)

Author

Ndip, Ivan ; Zoschke, K. ; Lobbicke, Kai ; Wolf, M.J. ; Guttowski, Stephan ; Reichl, Herbert ; Lang, K.-D. ; Henke, Heino

Author_Institution

Fraunhofer Inst. for Reliability & Microintegration, Berlin, Germany

Volume

4

Issue

3

fYear

2014

fDate

Mar-14

Firstpage

504

Lastpage

515

Abstract

In this paper, analytical, numerical-, and measurement-based methods for extracting the resistance, inductance, capacitance, and conductance of through silicon vias (TSVs) are classified, quantified, and compared from 100 MHz to 100 GHz. An in-depth analysis of the assumptions behind these methods is made, from which their limits of accuracy/validity are defined. Based on this, the most reliable methods within the studied frequency range are proposed. The TSVs are designed, fabricated, and measured. Very good correlation is obtained between electrical parameters of the TSVs extracted from the measurements and electromagnetic field simulations.

Keywords

capacitance measurement; electric admittance measurement; electric resistance measurement; integrated circuit measurement; integrated circuit modelling; numerical analysis; three-dimensional integrated circuits; TSVs; analytical-based methods; capacitance extraction; conductance extraction; electrical parameter extraction; electromagnetic field simulations; frequency 100 MHz to 100 GHz; inductance extraction; measurement-based methods; numerical-based methods; resistance extraction; through silicon vias; Accuracy; Inductance; Proximity effects; Reliability; Resistance; Silicon; Through-silicon vias; Analytical; RLCG parameters; measurement-based methods; numerical-; through-silicon via (TSV);

fLanguage

English

Journal_Title

Components, Packaging and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-3950

Type

jour

DOI

10.1109/TCPMT.2013.2279688

Filename

6605494