Title :
Temperature effects on the modulation response of an injection-locked InAs/InP Quantum-Dash laser
Author :
Naderi, N.A. ; Pochet, M. ; Grillot, F. ; Li, Y. ; Lester, L.F.
Author_Institution :
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM
Abstract :
The impact of device temperature variations on the modulation response of an injection-locked Quantum-Dash laser is analyzed. Lower slave operating temperatures result in a large reduction in the undesirable pre-resonance dip in the modulation response.
Keywords :
III-V semiconductors; indium compounds; optical modulation; quantum dash lasers; InAs-InP; device temperature variation impact; injection-locked quantum-dash laser; modulation response; preresonance dip; slave operating temperatures; temperature effects; Damping; Frequency; Indium gallium arsenide; Indium phosphide; Laser modes; Quantum well lasers; Semiconductor lasers; Substrates; Temperature; Tunable circuits and devices;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012497
