DocumentCode
1717309
Title
Temperature effects on the modulation response of an injection-locked InAs/InP Quantum-Dash laser
Author
Naderi, N.A. ; Pochet, M. ; Grillot, F. ; Li, Y. ; Lester, L.F.
Author_Institution
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM
fYear
2009
Firstpage
292
Lastpage
294
Abstract
The impact of device temperature variations on the modulation response of an injection-locked Quantum-Dash laser is analyzed. Lower slave operating temperatures result in a large reduction in the undesirable pre-resonance dip in the modulation response.
Keywords
III-V semiconductors; indium compounds; optical modulation; quantum dash lasers; InAs-InP; device temperature variation impact; injection-locked quantum-dash laser; modulation response; preresonance dip; slave operating temperatures; temperature effects; Damping; Frequency; Indium gallium arsenide; Indium phosphide; Laser modes; Quantum well lasers; Semiconductor lasers; Substrates; Temperature; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location
Newport Beach, CA
ISSN
1092-8669
Print_ISBN
978-1-4244-3432-9
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2009.5012497
Filename
5012497
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