Title :
Scaling behaviors of 25-NM asymmetrically recessed metamorphic high electron-mobility transistors
Author :
Xu, Dong ; Kong, Wendell M T ; Yang, Xiaoping ; Seekell, P. ; Mohnkern, L. ; Pleasant, L. Mt ; Karimy, H. ; Duh, K.H.G. ; Smith, P.M. ; Chao, P.C.
Author_Institution :
Microelectron. Center, BAE Syst., Nashua, NH
Abstract :
This paper reports the scaling behaviors of 25-nm asymmetrically recessed metamorphic high electron-mobility transistors. By employing an optimized epitaxial design and an asymmetric gate recess, excellent off-state and on-state breakdown voltages have been have been demonstrated for 25-nm high-performance metamorphic high electronmobility transistors. The results reported herein demonstrate that these devices are excellent candidates for ultra-high-frequency power applications.
Keywords :
aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor device breakdown; GaAs; InGaAs-InAlAs-GaAs; asymmetrically recessed metamorphic high electron-mobility transistors; epitaxial design; gate recess; molecular beam epitaxial growth; off-state breakdown voltages; on-state breakdown voltages; scaling behaviors; size 25 nm; ultra-high-frequency power applications; Chaos; Fabrication; Gallium arsenide; Geometry; HEMTs; Indium gallium arsenide; MODFETs; Substrates; Transconductance; mHEMTs;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012501
