Temperature dependent characteristics of InP RTD based CML-mobile D-Flip Flop IC

Author

Lee, Jooseok ; Choi, Sunkyu ; Yang, Kyounghoon

Author_Institution

Sch. of Electr. Eng. & Comput. Sci. (EECS), Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon

fYear

2009

Firstpage

308

Lastpage

310

Abstract

The temperature dependence of the InP-based AlAs-InGaAs-InAs-InGaAs-AlAs sub-well RTDs and RTD/HBT CML-MOBILE RZ D-Flip Flops has been investigated from 25degC to 150degC. The PVCR of RTDs decreases slightly as the temperature is increased, while the capacitance of RTDs remains almost constant. We found that the RTD/HBT RZ D-Flip Flop can operate stably at high temperatures, up to 100degC. The eye height of the RZ D-Flip Flop decreases by 7.7 % from 25degC to 125degC while it shows a higher decrease by 28.8 % above 125degC. To our knowledge, this is the first report on the temperature dependence of InP based RTD/HBT Digital ICs.

Keywords

III-V semiconductors; aluminium compounds; flip-flops; gallium arsenide; heterojunction bipolar transistors; indium compounds; monolithic integrated circuits; resonant tunnelling diodes; InP-AlAs-InGaAs-InAs-InGaAs-AlAs; RTD based CML-mobile D-Flip Flop IC; RTD-HBT CML-MOBILE RZ D-Flip Flops; high temperature effect; semiconductor based RTD-HBT Digital IC; temperature 25 C to 150 C; temperature dependent characteristics; Capacitance; Circuits; Computer science; Diodes; Energy consumption; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012502

Filename

5012502