Temperature dependent characteristics of InP RTD based CML-mobile D-Flip Flop IC

The temperature dependence of the InP-based AlAs-InGaAs-InAs-InGaAs-AlAs sub-well RTDs and RTD/HBT CML-MOBILE RZ D-Flip Flops has been investigated from 25degC to 150degC. The PVCR of RTDs decreases slightly as the temperature is increased, while the capacitance of RTDs remains almost constant. We found that the RTD/HBT RZ D-Flip Flop can operate stably at high temperatures, up to 100degC. The eye height of the RZ D-Flip Flop decreases by 7.7 % from 25degC to 125degC while it shows a higher decrease by 28.8 % above 125degC. To our knowledge, this is the first report on the temperature dependence of InP based RTD/HBT Digital ICs.