Fabrication of InP/InGaAs channel MOSFET with MOVPE selectively regrown source

Author

Kanazawa, Toru ; Saito, Hisashi ; Wakabayashi, Kazuya ; Tajima, Tomonori ; Miyamoto, Yasuyuki ; Furuya, Kazuhito

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo

fYear

2009

Firstpage

315

Lastpage

318

Abstract

An InP/InGaAs composite channel MOSFET with InGaAs source is fabricated, this InGaAs source is selectively regrown by metalorganic vapor phase epitaxy. The maximum drain current of MOSFET (at V_D = V_G = 3 V) is 360 mA/mm at room temperature with the Si-doped channel, 20-nm-thick SiO₂ gate insulator and 2 mum channel length. However, the drain current of regrown MOSFET is smaller than MOSFET without regrowth because of high access resistance which was caused by low doping concentration in regrown layer.

Keywords

III-V semiconductors; MOCVD; MOSFET; doping profiles; gallium arsenide; indium compounds; vapour phase epitaxial growth; InP-InGaAs; MOSFET; MOVPE; channel length; doping concentration; drain current; gate insulator; metalorganic vapor phase epitaxy; semiconductor composite channel; size 20 nm; voltage 3 V; Contacts; Electrodes; Epitaxial growth; Epitaxial layers; Fabrication; Gold; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; MOSFET circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012504

Filename

5012504