DocumentCode :
1717735
Title :
DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
Author :
Moschetti, Giuseppe ; Nilsson, Per-Ake ; Wadefalk, N. ; Malmkvist, M. ; Lefebvre, Eric ; Grahn, Jan ; Roelens, Yannick ; Noudeviwa, A. ; Olivier, Augustin ; Bollaert, S. ; Danneville, Frangois ; Desplanque, Ludovic ; Wallart, Xavier ; Dambrine, Gilles
Author_Institution :
Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg
fYear :
2009
Firstpage :
323
Lastpage :
325
Abstract :
The DC properties of 110-nm gate-length InAs/AlSb-based HEMTs at cryogenic (30 K) and room temperature (300 K) have been investigated. Compared to 300K, devices at 30 K exhibited lower on-resistance (RON) and output conductance (gDS), a higher transconductance (gm) and a more distinct knee in the IDS(VDS) characteristics. The improvement in the DC performance at cryogenic temperature should mainly be attributed to the lower source-drain resistance.
Keywords :
III-V semiconductors; aluminium compounds; cryogenics; high electron mobility transistors; indium compounds; DC characteristics; HEMT; InAs-AlSb; cryogenic temperature; high transconductance; lower source-drain resistance; output conductance; size 110 nm; temperature 293 K to 298 K; temperature 30 K; Contact resistance; Cryogenics; Dry etching; Gold; HEMTs; MODFETs; Noise reduction; Temperature sensors; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
ISSN :
1092-8669
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2009.5012506
Filename :
5012506
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1717735
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