Title :
Metal-oxide-HEMT on 6.1Å antimonides
Author :
Fan, Da-Wei ; Lin, Yu-Chao ; Lin, Heng-Kuang ; Chiu, Pei-Chin ; Chen, Shu-Han ; Chyi, Jen-Inn ; Ko, Chih-Hsin ; Kuan, Ta-Ming ; Hsieh, Meng-Kuei ; Lee, Wen-Chin ; Wann, Clement H.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli
Abstract :
We successfully demonstrated DC and RF performance of a metal-oxide-HEMT based on baseline InAs/AlSb HEMT epitaxy material. E-beam evaporated Al1-xOx was chosen for the dielectric film and its composition characterized by EDS. In a device with 2.0 mum gate length, maximum drain current is 286 mA/mm and peak transconductance is 495 mS/mm at drain voltage of 0.4 V. Microwave performance shows a fT of 10 GHz and an fmax of 20 GHz. Degraded subthreshold slope but suppressed gate leakage specifically at large electric field were observed.
Keywords :
III-V semiconductors; X-ray chemical analysis; aluminium compounds; antimony; dielectric thin films; electron beams; high electron mobility transistors; indium compounds; DC performance; E-beam evaporation; EDS; InAs-AlSb; RF performance; Sb3-; degraded subthreshold slope; dielectric film; drain current; epitaxy material; frequency 10 GHz; frequency 20 GHz; gate leakage; metal-oxide-HEMT; microwave performance; size 2.0 mum; transconductance; Degradation; Dielectric films; Dielectric materials; Epitaxial growth; HEMTs; Inorganic materials; Microwave devices; Radio frequency; Transconductance; Voltage; InAs/AlSb; metal-oxide-HEMT;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012508
