Ionized physical vapor deposition characterized for ionization fraction and deposition rate

Summary form only given. An inductively coupled plasma (ICP) RF antenna is added to a commercial magnetron sputtering machine. The power absorbed by this multi-turn water-cooled coil heats the electrons and raises their density, thereby increasing the ionization cross section for the metal sputtered neutrals. This creates up to 78% ionization of the depositing flux with less than 800 W of RF power at 2.5 kW of magnetron power. By applying a bias to the substrate the majority of the metal can be deposited normally, and at energies controllable by the set bias level. Aluminum and copper targets are used with argon and neon working gases. Operating pressures of 15 to 35 mTorr are investigated. Alternate ionization schemes not requiring an in-situ antenna are also investigated. The applications of this design to higher aspect-ratio trenches and sub-.5 /spl mu/m features is discussed.