Title :
Low-leakage InAS/AlSb HEMT with high FT-LG product
Author :
Lin, Yu-Chao ; Fan, Ta-Wei ; Lin, Heng-Kuang ; Chiu, Pei-Chin ; Chyi, Jen-Inn ; Ko, Chih-Hsin ; Kuan, Ta-Ming ; Hsieh, Meng-Kuei ; Lee, Wen-Chin ; Wann, Clement H.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli
Abstract :
Conventional InAs/AlSb HEMTs suffer high gate leakage and incomplete pinch-off issues due to instable chemical property of the AlSb and GaSb materials though their excellent performance and circuit application have already been demonstrated. Based on the concerns, we proposed a two-step passivation process for minimizing the negative effect based on developed high-quality InAs/AlSb HEMT materials by solid-source molecular beam epitaxy. Improved device performance is observed.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; passivation; InAs-AlSb; high FT-LG product; high gate leakage; instable chemical property; low-leakage HEMT; passivation process; solid-source molecular beam epitaxy; Cities and towns; Cutoff frequency; Electron mobility; Fabrication; Gate leakage; HEMTs; MODFETs; Molecular beam epitaxial growth; Passivation; Photonic band gap; InAs/AlSb; high electron mobility transistor (HEMT);
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012509
