Evaluation of the degeneracy of hole´s quantum levels in the InGaAS/InP quantum well structures by using photoluminescence spectra

We have evaluated the strain in the InGaAs/InP quantum well structures using photoluminescence (PL) spectra. We have measured PL spectrum peak changing the incident angle for both TE and TM polarized excitation light. The difference in the behavior of the PL peak shift between TE mode excitation and TM mode excitation is examined. To analyze the strain in the well layer we have calculated the quantum levels and compared the PL peak wavelength. The difference between these values is considered to correspond to the strain. We have estimated that the degeneracy of first quantum levels of light and heavy holes occurs in the little expansion region in the well layer.