• DocumentCode
    1717972
  • Title

    Effect of sulfur passivation and dielectric capping on the dark current of InGaAs/InP PIN photodetectors

  • Author

    Sheela, D. ; DasGupta, Nandita

  • Author_Institution
    Dept. of Electr. Eng., IIT Madras, Chennai
  • fYear
    2009
  • Firstpage
    274
  • Lastpage
    275
  • Abstract
    This work is aimed at optimizing the surface passivation scheme for InGaAs/InP PIN photodetector using [(NH4)2Sx, x>1] solution and comparing the effect of two different dielectric capping layers on the long term stability of the detector.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; passivation; photodetectors; PIN photodetectors; dark current; dielectric capping; long term stability; sulfur passivation effect; Chemicals; Dark current; Detectors; Dielectrics; Indium gallium arsenide; Indium phosphide; Passivation; Photodetectors; Surface treatment; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
  • Conference_Location
    Newport Beach, CA
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-3432-9
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2009.5012511
  • Filename
    5012511
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1717972